Reducing Time and Costs of FT-IR Studies of the Effect of SiNx, Dopants, and Emitter on Hydrogen Species in Si Wafers and Solar Cell Structures

Nicole Aßmann; Rune Søndenå; Benjamin Hammann; Wolfram Kwapil; Eduard Monakhov

doi:10.52825/siliconpv.v1i.840

Authors

Nicole Aßmann Centre for Materials Science and Nanotechnology https://orcid.org/0000-0001-8036-416X
Rune Søndenå Institute for Energy Technology https://orcid.org/0000-0001-7533-3676
Benjamin Hammann Fraunhofer Institute for Solar Energy Systems https://orcid.org/0000-0002-3530-4181
Wolfram Kwapil Fraunhofer Institute for Solar Energy Systems https://orcid.org/0000-0001-8489-1805
Eduard Monakhov Centre for Materials Science and Nanotechnology https://orcid.org/0000-0002-7015-3358

DOI:

https://doi.org/10.52825/siliconpv.v1i.840

Keywords:

FT-IR Spectroscopy, Hydrogen Detection, Photovoltaics, Silicon

Abstract

Accurately measuring the hydrogen content in silicon (Si) solar cells is essential due to its connection to surface degradation and light and elevated temperature induced degradation (LeTID). Fourier Transform-Infrared (FT-IR) spectroscopy provides a quantitative technique for determining the content of various hydrogen species in Si wafers that have undergone various process steps. In this study, we examine both the effect of a silicon nitride (SiN_x:H) layer during FT-IR spectroscopic measurements on hydrogen species, as well as the impact of an emitter present during firing on the amount of hydrogen introduced into Si wafers. We find that the presence of SiN_x:H during measurements has negligible effects on the measured hydrogen species, potentially simplifying the preparation steps for FT-IR. For the emitter investigation we analyze boron (B)- and gallium (Ga)-doped p-type wafers to detect H-B, H-Ga, O_i-H₂, and H₂. We observe that hydrogen species initially present in B- and Ga-doped Si wafers differ significantly. Only H-Ga is detected in Ga-doped wafers, while H-B, O_i-H₂, and H₂ signals are measured in B-doped wafers. Moreover, we cannot confirm an increased release of H through the emitter into the bulk during the firing process. Finally, we conduct measurements at different temperatures and confirm that cryogenic temperatures are more effective for detecting H-B and H₂ with concentrations in the 10¹⁴ cm^-3 range. Nevertheless, useful spectra can still be obtained at liquid nitrogen (N₂) temperatures.

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Reducing Time and Costs of FT-IR Studies of the Effect of SiNx, Dopants, and Emitter on Hydrogen Species in Si Wafers and Solar Cell Structures

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