Characterization of Ultrathin Layers in Perovskite/TOPCon Tandem Cells With Photoelectron Spectroscopy Utilizing Advanced Data Evaluation Methods
DOI:
https://doi.org/10.52825/siliconpv.v2i.1325Keywords:
Perovskite/Silicon Tandem, Passivation Layer, Photoelectron SpectroscopyAbstract
Next generation solar cells like tunnel oxide passivated contacts (TOPCon) or perovskite/TOPCon tandem solar cells require efficient interface passivation by ultrathin organic or inorganic layers to uncover their true efficiency potential. Especially the microstructure and the Si suboxide content of the tunnel oxide in poly-Si(Ox)/SiO2/c-Si TOPCon stacks have been shown to have a tremendous influence on macroscopic device properties. Similarly, perovskite/ITO interface modification by a self-assembled monolayer (SAM) molecule is necessary to achieve high power conversion efficiencies of the perovskite sub cell. However, the characterization of such thin film structures and the interfacial composition is challenging. In this contribution, we present characterization results of ultrathin passivation layers using angle-resolved X-ray photoelectron spectroscopy (XPS) and advanced data evaluation routines, including maximum entropy methods and analyses of inelastically-scattered electron background data. In particular, the interfaces in the stacks (1) partially oxidized a-Si/SiO2/c-Si and (2) 2PACz/ITO after different thermal treatment were investigated. It could be shown that already a ~5 nm thin SiNx layer prevents unwanted oxidation from ambient during cooldown of TOPCon-like stacks and that annealing above 100 °C can convert a 2PACz multilayer to a 2PACz monolayer on an ITO substrate.
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Copyright (c) 2024 Stefan Lange, Carl Eric Hartwig, Oussama Er-Raji, Patricia S. C. Schulze, Marko Turek, Juliane Borchert
This work is licensed under a Creative Commons Attribution 4.0 International License.
Accepted 2024-09-12
Published 2024-12-06
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Fraunhofer-Gesellschaft
Grant numbers MaNiTU
