Investigation of the Impact of the Wafer Resistivities on Double-Side Passivated Contact Silicon Solar Cells
DOI:
https://doi.org/10.52825/siliconpv.v2i.1271Keywords:
Passivating Contacts, Polysilicon, Screen Printing, Selective Contact, InkjetAbstract
In this work, we investigate the impact of substrate resistivities on the performance of poly-Si based double-side passivated contact solar cells, featuring high-temperature fire-through contacts to both n-type and p-type poly-Si, where the contacts are co-fired at the same firing temperatures. Large-area double-side passivated contact solar cells are fabricated on n-type wafers and thoroughly characterized to understand the impact of the change in Si wafer resistivity on the performance of the solar cells. The solar cells are fabricated on n-type substrates, with p+ poly-Si deposited on the planar rear side and n+ poly-Si on the textured front. The n+ poly-Si on the front side is selectively patterned to constrain it to the regions below the metal contacts. The fabricated solar cells achieve ≈ 22% efficiency on large area using high-temperature fire-through metallization. With the help of detailed characterization, we identify the losses that limit the device efficiency.
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- 2025-01-17 (2)
- 2025-01-09 (1)
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Copyright (c) 2024 Pradeep Padhamnath, Gabby De Luna, Ruohan Zhong, John Derek Arcebal, Ajeet Rohatgi, Armin G. Aberle
This work is licensed under a Creative Commons Attribution 4.0 International License.
Accepted 2024-10-16
Published 2025-01-17
Funding data
-
U.S. Department of Energy
Grant numbers DE-EE0009350 -
Office of Energy Efficiency and Renewable Energy
Grant numbers DE-EE0009350
